2ED020I06-FI – 650 V Dual IGBT Half-Bridge Gate Driver IC

Description

The 2ED020I06-FI is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver, the 2ED020I06-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 650V.

Features:

1.  Floating high side driver
2.  Undervoltage lockout for both channels
3.  3.3 V and 5 V TTL compatible inputs
4. CMOS Schmitt-triggered inputs with pull-down
5.  Non-inverting inputs
6.  Interlocking inputs
7.  Dedicated shutdown input with pull-up
8.  RoHS compliant

Package Includes:

1 x 2ED020I06-FI – 650 V Dual IGBT Half-Bridge Gate Driver IC